دیتاشیت NDUL03N150CG
مشخصات دیتاشیت
| نام دیتاشیت |
NDUL03N150C
|
| حجم فایل |
261.775
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NDUL03N150CG
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Power Dissipation (Pd):
3W;50W
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Total Gate Charge (Qg@Vgs):
34nC@10V
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Drain Source Voltage (Vdss):
1.5kV
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Input Capacitance (Ciss@Vds):
650pF@30V
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Continuous Drain Current (Id):
2.5A
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Gate Threshold Voltage (Vgs(th)@Id):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
10.5Ω@10V,1.25A
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Package:
TO-3PL
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1500V
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Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1.25A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 30V
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FET Feature:
-
-
Power Dissipation (Max):
3W (Ta), 50W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-3P(L)
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Package / Case:
TO-3PL
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Base Part Number:
NDUL03
